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FDMC8030
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Arrays
- 8-PowerWDFN
- Dual N-Channel 40 V 1.9 W 30 nC Silicon Surface Mount Mosfet - POWER 33-8
Date Sheet
在庫數 7632
- 1+: $1.86916
- 10+: $1.76336
- 100+: $1.66355
- 500+: $1.56939
- 1000+: $1.48055
小計金額 $1.86916
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 3 hours ago)
- Factory Lead Time:7 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-PowerWDFN
- Number of Pins:8
- Weight:196mg
- Transistor Element Material:SILICON
- Number of Elements:1
- Turn Off Delay Time:19 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2007
- JESD-609 Code:e4
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:8
- ECCN Code:EAR99
- Terminal Finish:Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Additional Feature:AVALANCHE RATED
- Max Power Dissipation:800mW
- Number of Channels:2
- Element Configuration:Dual
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:1.9W
- Case Connection:DRAIN SOURCE
- Turn On Delay Time:7 ns
- FET Type:2 N-Channel (Dual)
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:10m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id:2.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:1975pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
- Rise Time:3ns
- Drain to Source Voltage (Vdss):40V
- Fall Time (Typ):3 ns
- Continuous Drain Current (ID):12A
- Threshold Voltage:1.5V
- Gate to Source Voltage (Vgs):12V
- Drain to Source Breakdown Voltage:40V
- Pulsed Drain Current-Max (IDM):50A
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj):150°C
- FET Feature:Logic Level Gate
- Feedback Cap-Max (Crss):30 pF
- Height:800μm
- Length:3mm
- Width:3mm
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
在庫數 7632
- 1+: $1.86916
- 10+: $1.76336
- 100+: $1.66355
- 500+: $1.56939
- 1000+: $1.48055
小計金額 $1.86916
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