FDS9926A

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
8-SOIC (0.154, 3.90mm Width)
ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
Date Sheet

在庫數 10000

1+： $0.99479
10+： $0.93848
100+： $0.88536
500+： $0.83524
1000+： $0.78796

小計金額 $0.99479

仕様よくある質問

Factory Lead Time：10 Weeks
Lifecycle Status：ACTIVE (Last Updated: 1 week ago)
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：187mg
Transistor Element Material：SILICON
Number of Elements：2
Turn Off Delay Time：15 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2003
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
Termination：SMD/SMT
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Voltage - Rated DC：20V
Max Power Dissipation：2W
Terminal Form：GULL WING
Current Rating：6.5A
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2W
Turn On Delay Time：8 ns
Power - Max：900mW
FET Type：2 N-Channel (Dual)
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：30m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：650pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：9nC @ 4.5V
Rise Time：9ns
Fall Time (Typ)：4 ns
Continuous Drain Current (ID)：6.5A
Threshold Voltage：1V
Gate to Source Voltage (Vgs)：10V
Drain-source On Resistance-Max：0.03Ohm
Drain to Source Breakdown Voltage：20V
Dual Supply Voltage：20V
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：Logic Level Gate
Nominal Vgs：1 V
Length：5mm
Height：1.5mm
Width：4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 10000

1+： $0.99479
10+： $0.93848
100+： $0.88536
500+： $0.83524
1000+： $0.78796

小計金額 $0.99479

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FDS9926A