FDS9953A

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
8-SOIC (0.154, 3.90mm Width)
MOSFET 2P-CH 30V 2.9A 8SOIC
Date Sheet

在庫數 83121

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 week ago)
Factory Lead Time：10 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：230.4mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：2.9A
Number of Elements：2
Turn Off Delay Time：11 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2001
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：130MOhm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：-30V
Max Power Dissipation：2W
Terminal Form：GULL WING
Current Rating：-2.9A
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2W
Turn On Delay Time：4.5 ns
Power - Max：900mW
FET Type：2 P-Channel (Dual)
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：130m Ω @ 1A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：185pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：3.5nC @ 10V
Rise Time：13ns
Drain to Source Voltage (Vdss)：30V
Fall Time (Typ)：2 ns
Continuous Drain Current (ID)：2.9mA
Threshold Voltage：-1.8V
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：-30V
Pulsed Drain Current-Max (IDM)：10A
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：Logic Level Gate
Nominal Vgs：1.8 V
Height：1.5mm
Length：5mm
Width：4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 83121

小計金額 $0.00000

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FDS9953A