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FDS9400A
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- 8-SOIC (0.154, 3.90mm Width)
- MOSFET SO-8
Date Sheet
在庫數 3000
- 1+: $2.05203
- 10+: $1.93588
- 100+: $1.82630
- 500+: $1.72292
- 1000+: $1.62540
小計金額 $2.05203
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 1 week ago)
- Factory Lead Time:8 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154, 3.90mm Width)
- Number of Pins:8
- Weight:230.4mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:3.4A Ta
- Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
- Number of Elements:1
- Power Dissipation (Max):2.5W Ta
- Turn Off Delay Time:11 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2002
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:8
- ECCN Code:EAR99
- Resistance:130MOhm
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:-30V
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Current Rating:-3.4A
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:2.5W
- Turn On Delay Time:4.5 ns
- FET Type:P-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:130m Ω @ 1A, 10V
- Vgs(th) (Max) @ Id:3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:205pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs:3.5nC @ 5V
- Rise Time:12.5ns
- Drain to Source Voltage (Vdss):30V
- Vgs (Max):±25V
- Fall Time (Typ):2 ns
- Continuous Drain Current (ID):3.4A
- Threshold Voltage:-1.8V
- Gate to Source Voltage (Vgs):25V
- Drain to Source Breakdown Voltage:-30V
- Nominal Vgs:-1.8 V
- Height:1.575mm
- Length:4.9mm
- Width:3.9mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 3000
- 1+: $2.05203
- 10+: $1.93588
- 100+: $1.82630
- 500+: $1.72292
- 1000+: $1.62540
小計金額 $2.05203
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