FDS6930B

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
8-SOIC (0.154, 3.90mm Width)
MOSFET 2N-CH 30V 5.5A 8SOIC
Date Sheet

在庫數 38000

1+： $0.44156
10+： $0.41656
100+： $0.39299
500+： $0.37074
1000+： $0.34976

小計金額 $0.44156

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Factory Lead Time：10 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Transistor Element Material：SILICON
Number of Elements：2
Turn Off Delay Time：16 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2010
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：38MOhm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：30V
Max Power Dissipation：2W
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：5.5A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Voltage：30V
Current：55A
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2W
Turn On Delay Time：6 ns
Power - Max：900mW
FET Type：2 N-Channel (Dual)
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：38m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：412pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：3.8nC @ 5V
Rise Time：6ns
Fall Time (Typ)：2 ns
Continuous Drain Current (ID)：5.5A
Threshold Voltage：1.9V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：30V
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：Logic Level Gate
Nominal Vgs：1.9 V
Feedback Cap-Max (Crss)：60 pF
Height：1.5mm
Length：5mm
Width：4mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 38000

1+： $0.44156
10+： $0.41656
100+： $0.39299
500+： $0.37074
1000+： $0.34976

小計金額 $0.44156

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FDS6930B