FDS6912A

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
8-SOIC (0.154, 3.90mm Width)
MOSFET 2N-CH 30V 6A 8SOIC
Date Sheet

在庫數 121200

1+： $0.98378
10+： $0.92809
100+： $0.87556
500+： $0.82600
1000+： $0.77925

小計金額 $0.98378

仕様よくある質問

Factory Lead Time：10 Weeks
Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Package / Case：8-SOIC (0.154, 3.90mm Width)
Mount：Surface Mount
Mounting Type：Surface Mount
Number of Pins：8
Weight：187mg
Transistor Element Material：SILICON
Turn Off Delay Time：23 ns
Number of Elements：2
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2003
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：28MOhm
Terminal Finish：Tin (Sn)
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：30V
Max Power Dissipation：1.6W
Terminal Form：GULL WING
Current Rating：6A
Element Configuration：Dual
Operating Mode：ENHANCEMENT MODE
Power Dissipation：1.6W
Turn On Delay Time：8 ns
Power - Max：900mW
FET Type：2 N-Channel (Dual)
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：28m Ω @ 6A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：575pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：8.1nC @ 5V
Rise Time：5ns
Fall Time (Typ)：5 ns
Continuous Drain Current (ID)：6A
Threshold Voltage：1.9V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：6A
Drain to Source Breakdown Voltage：30V
Dual Supply Voltage：30V
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：Logic Level Gate
Width：4mm
Length：5mm
Height：1.5mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 121200

1+： $0.98378
10+： $0.92809
100+： $0.87556
500+： $0.82600
1000+： $0.77925

小計金額 $0.98378

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FDS6912A