STS2DNF30L

STMicroelectronics
Transistors - FETs, MOSFETs - Arrays
8-SOIC (0.154, 3.90mm Width)
MOSFET N-Ch 30 Volt 3 Amp
Date Sheet

在庫數 6800

1+： $1.70446
10+： $1.60798
100+： $1.51696
500+： $1.43110
1000+： $1.35009

小計金額 $1.70446

仕様よくある質問

Lifecycle Status：NRND (Last Updated: 7 months ago)
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：4.535924g
Transistor Element Material：SILICON
Number of Elements：2
Turn Off Delay Time：12 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：STripFET™
JESD-609 Code：e4
Part Status：Not For New Designs
Moisture Sensitivity Level (MSL)：3 (168 Hours)
Number of Terminations：8
ECCN Code：EAR99
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC：30V
Max Power Dissipation：2W
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：3A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STS2D
Pin Count：8
Configuration：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2W
Turn On Delay Time：19 ns
FET Type：2 N-Channel (Dual)
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：110m Ω @ 1A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：121pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：4.5nC @ 10V
Rise Time：20ns
Fall Time (Typ)：8 ns
Continuous Drain Current (ID)：3A
Threshold Voltage：1.7V
Gate to Source Voltage (Vgs)：18V
Drain Current-Max (Abs) (ID)：3A
Drain-source On Resistance-Max：0.15Ohm
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：9A
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：Logic Level Gate
Height：6.35mm
Length：50.8mm
Width：6.35mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 6800

1+： $1.70446
10+： $1.60798
100+： $1.51696
500+： $1.43110
1000+： $1.35009

小計金額 $1.70446

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STS2DNF30L