FDB8832

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 30V 80A D2PAK
Date Sheet

在庫數 80

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：10 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：2
Weight：1.31247g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：34A Ta 80A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：300W Tc
Turn Off Delay Time：54 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3V @ 250μA
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2006
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：300W
Case Connection：DRAIN
Turn On Delay Time：24 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1.9m Ω @ 80A, 10V
Input Capacitance (Ciss) (Max) @ Vds：11400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：265nC @ 10V
Rise Time：73ns
Vgs (Max)：±20V
Fall Time (Typ)：38 ns
Reverse Recovery Time：59 ns
Continuous Drain Current (ID)：80A
Threshold Voltage：1.6V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：34A
Drain to Source Breakdown Voltage：30V
Dual Supply Voltage：30V
Nominal Vgs：1.6 V
Height：4.83mm
Length：10.67mm
Width：11.33mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 80

小計金額 $0.00000

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FDB8832