FDB8860

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Trans MOSFET N-CH 30V 31A 3-Pin(2 Tab) D2PAK T/R
Date Sheet

在庫數 100000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：10 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Weight：1.31247g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：80A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：254W Tc
Turn Off Delay Time：79 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3V @ 250μA
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2005
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Form：GULL WING
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：254W
Case Connection：DRAIN
Turn On Delay Time：14 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：2.3m Ω @ 80A, 10V
Input Capacitance (Ciss) (Max) @ Vds：12585pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：214nC @ 10V
Rise Time：213ns
Vgs (Max)：±20V
Fall Time (Typ)：49 ns
Continuous Drain Current (ID)：80A
Threshold Voltage：1.7V
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.0027Ohm
Drain to Source Breakdown Voltage：30V
Avalanche Energy Rating (Eas)：947 mJ
Height：4.83mm
Length：10.67mm
Width：11.33mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant

在庫數 100000

小計金額 $0.00000

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FDB8860