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DMC3032LSD-13
-
Diodes Incorporated
-
Transistors - FETs, MOSFETs - Arrays
- 8-SOIC (0.154, 3.90mm Width)
- MOSFET N/P-CH 30V 8.1A/7A 8SOP
Date Sheet
在庫數 39
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time：15 Weeks
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154, 3.90mm Width)
- Number of Pins：8
- Weight：73.992255mg
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：8.1A 7A
- Number of Elements：2
- Turn Off Delay Time：50.1 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2010
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：8
- ECCN Code：EAR99
- Terminal Finish：Matte Tin (Sn)
- Additional Feature：HIGH RELIABILITY
- Max Power Dissipation：2.5W
- Terminal Position：DUAL
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Time@Peak Reflow Temperature-Max (s)：40
- Pin Count：8
- Number of Channels：2
- Operating Mode：ENHANCEMENT MODE
- Turn On Delay Time：10.1 ns
- FET Type：N and P-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：32m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds：404.5pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs：9.2nC @ 10V
- Rise Time：6.5ns
- Drain to Source Voltage (Vdss)：30V
- Polarity/Channel Type：N-CHANNEL AND P-CHANNEL
- Fall Time (Typ)：22.2 ns
- Continuous Drain Current (ID)：7A
- Gate to Source Voltage (Vgs)：20V
- Drain to Source Breakdown Voltage：-30V
- FET Technology：METAL-OXIDE SEMICONDUCTOR
- FET Feature：Logic Level Gate
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
在庫數 39
小計金額 $0.00000
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