FDC5614P

ON Semiconductor
Transistors - FETs, MOSFETs - Single
SOT-23-6 Thin, TSOT-23-6
MOSFET P-CH 60V 3A SSOT-6
Date Sheet

在庫數 150000

1+： $0.73675
10+： $0.69505
100+： $0.65570
500+： $0.61859
1000+： $0.58357

小計金額 $0.73675

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：5 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Number of Pins：6
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：3A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：1.6W Ta
Turn Off Delay Time：19 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2002
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
ECCN Code：EAR99
Resistance：105MOhm
Voltage - Rated DC：-60V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：-3A
Number of Channels：1
Voltage：60V
Element Configuration：Single
Current：2A
Operating Mode：ENHANCEMENT MODE
Power Dissipation：1.6W
Turn On Delay Time：7 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：105m Ω @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：759pF @ 30V
Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
Rise Time：10ns
Vgs (Max)：±20V
Fall Time (Typ)：10 ns
Continuous Drain Current (ID)：3A
Threshold Voltage：-1.6V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：-60V
Max Junction Temperature (Tj)：150°C
Nominal Vgs：-1.6 V
Height：900μm
Length：3mm
Width：1.7mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 150000

1+： $0.73675
10+： $0.69505
100+： $0.65570
500+： $0.61859
1000+： $0.58357

小計金額 $0.73675

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FDC5614P