STD18N55M5

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Mosfet Transistor, N Channel, 13 A, 550 V, 0.18 Ohm, 10 V, 4 V Rohs Compliant: Yes
Date Sheet

在庫數 4770

1+： $3.19597
10+： $3.01507
100+： $2.84441
500+： $2.68340
1000+： $2.53151

小計金額 $3.19597

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
Factory Lead Time：17 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：16A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：110W Tc
Turn Off Delay Time：29 ns
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
Series：MDmesh™ V
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：180mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Base Part Number：STD18
Pin Count：3
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：90W
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：192m Ω @ 8A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1260pF @ 100V
Gate Charge (Qg) (Max) @ Vgs：31nC @ 10V
Rise Time：9.5ns
Vgs (Max)：±25V
Fall Time (Typ)：13 ns
Continuous Drain Current (ID)：13A
Threshold Voltage：4V
Gate to Source Voltage (Vgs)：25V
Drain Current-Max (Abs) (ID)：9A
Drain to Source Breakdown Voltage：550V
Pulsed Drain Current-Max (IDM)：56A
Height：2.4mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 4770

1+： $3.19597
10+： $3.01507
100+： $2.84441
500+： $2.68340
1000+： $2.53151

小計金額 $3.19597

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STD18N55M5