STD16N65M5

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 650V 12A DPAK
Date Sheet

在庫數 22800

1+： $3.40859
10+： $3.21565
100+： $3.03364
500+： $2.86192
1000+： $2.69993

小計金額 $3.40859

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
Factory Lead Time：17 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：12A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：90W Tc
Turn Off Delay Time：30 ns
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
Series：MDmesh™ V
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：299mOhm
Additional Feature：ULTRA-LOW RESISTANCE
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD16
Pin Count：3
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：90W
Case Connection：DRAIN
Turn On Delay Time：25 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：299m Ω @ 6A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1250pF @ 100V
Gate Charge (Qg) (Max) @ Vgs：45nC @ 10V
Rise Time：9ns
Vgs (Max)：±25V
Fall Time (Typ)：7 ns
Continuous Drain Current (ID)：12A
Threshold Voltage：4V
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：650V
Pulsed Drain Current-Max (IDM)：48A
Avalanche Energy Rating (Eas)：200 mJ
Height：2.4mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 22800

1+： $3.40859
10+： $3.21565
100+： $3.03364
500+： $2.86192
1000+： $2.69993

小計金額 $3.40859

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STD16N65M5