STD3NK80ZT4

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Trans MOSFET N-CH 800V 2.5A 3-Pin(2 Tab) DPAK T/R
Date Sheet

在庫數 20000

1+： $1.91908
10+： $1.81046
100+： $1.70798
500+： $1.61130
1000+： $1.52009

小計金額 $1.91908

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
Factory Lead Time：12 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：2.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：70W Tc
Turn Off Delay Time：36 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：SuperMESH™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：4.5Ohm
Terminal Finish：Matte Tin (Sn) - annealed
Additional Feature：AVALANCHE RATED
Voltage - Rated DC：800V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：2.5A
Base Part Number：STD3N
Pin Count：3
JESD-30 Code：R-PSSO-G2
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：70W
Turn On Delay Time：17 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4.5 Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id：4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds：485pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：19nC @ 10V
Rise Time：27ns
Vgs (Max)：±30V
Fall Time (Typ)：40 ns
Continuous Drain Current (ID)：1.25A
Threshold Voltage：3.75V
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：800V
Max Junction Temperature (Tj)：150°C
Height：2.52mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 20000

1+： $1.91908
10+： $1.81046
100+： $1.70798
500+： $1.61130
1000+： $1.52009

小計金額 $1.91908

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STD3NK80ZT4