FDMS8670S

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-PowerTDFN
Trans MOSFET N-CH 30V 20A 8-Pin Power 56 T/R
Date Sheet

在庫數 79999

1+： $0.70653
10+： $0.66654
100+： $0.62881
500+： $0.59322
1000+： $0.55964

小計金額 $0.70653

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 4 days ago)
Factory Lead Time：18 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Number of Pins：8
Weight：68.1mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：20A Ta 42A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 78W Tc
Turn Off Delay Time：37 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®, SyncFET™
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Resistance：3.5MOhm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：30V
Terminal Position：DUAL
Terminal Form：FLAT
Current Rating：42A
JESD-30 Code：R-PDSO-F5
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：14 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：3.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds：4000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：73nC @ 10V
Rise Time：19ns
Vgs (Max)：±20V
Fall Time (Typ)：10 ns
Continuous Drain Current (ID)：42A
Threshold Voltage：1.5V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：20A
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：200A
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 79999

1+： $0.70653
10+： $0.66654
100+： $0.62881
500+： $0.59322
1000+： $0.55964

小計金額 $0.70653

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FDMS8670S