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FDMS8025S
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- 8-PowerTDFN
- MOSFET N-CH 30V POWER56
Date Sheet
在庫數 5664
- 1+: $1.54990
- 10+: $1.46217
- 100+: $1.37940
- 500+: $1.30132
- 1000+: $1.22766
小計金額 $1.54990
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time:18 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Number of Pins:8
- Weight:68.1mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:24A Ta 49A Tc
- Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
- Number of Elements:1
- Power Dissipation (Max):2.5W Ta 50W Tc
- Turn Off Delay Time:29 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®, SyncFET™
- Published:2010
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:5
- ECCN Code:EAR99
- Resistance:2.8MOhm
- Terminal Finish:Tin (Sn)
- Terminal Position:DUAL
- Terminal Form:FLAT
- JESD-30 Code:R-PDSO-F5
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:50W
- Case Connection:DRAIN
- Turn On Delay Time:11 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:2.8m Ω @ 24A, 10V
- Vgs(th) (Max) @ Id:3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds:3000pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs:47nC @ 10V
- Rise Time:4.5ns
- Vgs (Max):±20V
- Fall Time (Typ):3.7 ns
- Continuous Drain Current (ID):49A
- Threshold Voltage:1.7V
- JEDEC-95 Code:MO-240AA
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):24A
- Drain to Source Breakdown Voltage:30V
- Pulsed Drain Current-Max (IDM):100A
- Avalanche Energy Rating (Eas):66 mJ
- Height:1.05mm
- Length:5mm
- Width:6mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 5664
- 1+: $1.54990
- 10+: $1.46217
- 100+: $1.37940
- 500+: $1.30132
- 1000+: $1.22766
小計金額 $1.54990
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