FDS5670

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
MOSFET N-CH 60V 10A 8-SOIC
Date Sheet

在庫數 20000

1+： $2.48292
10+： $2.34238
100+： $2.20979
500+： $2.08471
1000+： $1.96671

小計金額 $2.48292

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：10A Ta
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：50 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：1999
Series：PowerTrench®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：14MOhm
Voltage - Rated DC：60V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：10A
Configuration：SINGLE WITH BUILT-IN DIODE
Voltage：60V
Current：10A
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：16 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：14m Ω @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：2900pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：70nC @ 10V
Rise Time：10ns
Vgs (Max)：±20V
Fall Time (Typ)：23 ns
Continuous Drain Current (ID)：10A
Threshold Voltage：2.4V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：60V
Dual Supply Voltage：60V
Nominal Vgs：2.4 V
Height：1.5mm
Length：5mm
Width：4mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Radiation Hardening：No
Lead Free：Lead Free

在庫數 20000

1+： $2.48292
10+： $2.34238
100+： $2.20979
500+： $2.08471
1000+： $1.96671

小計金額 $2.48292

類似スペック製品

FDS5670 ON Semiconductor
最低価格$2.482925 在庫數 20000
FDS5672 ON Semiconductor
最低価格$2.167924 在庫數 30000
IRF7855PBF Infineon Technologies
見積かごへ在庫數 1
IRF7478TRPBF Infineon Technologies
見積かごへ在庫數 8618

Phone

FDS5670