FDS5672

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
In a Pack of 5, N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC ON Semiconductor FDS5672
Date Sheet

在庫數 30000

1+： $2.16792
10+： $2.04521
100+： $1.92944
500+： $1.82023
1000+： $1.71720

小計金額 $2.16792

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：12 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：12A Tc
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：35 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2001
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：10MOhm
Voltage - Rated DC：60V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：12A
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：13 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：10m Ω @ 12A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：2200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：45nC @ 10V
Rise Time：20ns
Vgs (Max)：±20V
Fall Time (Typ)：14 ns
Continuous Drain Current (ID)：12mA
Threshold Voltage：4V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：60V
Max Junction Temperature (Tj)：150°C
Nominal Vgs：4 V
Height：1.75mm
Length：5mm
Width：4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 30000

1+： $2.16792
10+： $2.04521
100+： $1.92944
500+： $1.82023
1000+： $1.71720

小計金額 $2.16792

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FDS5672