STB55NF06LT4

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-Ch 60 Volt 55 Amp
Date Sheet

在庫數 1258

1+： $2.06642
10+： $1.94946
100+： $1.83911
500+： $1.73501
1000+： $1.63680

小計金額 $2.06642

仕様よくある質問

Factory Lead Time：12 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Turn Off Delay Time：40 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4.7V @ 250μA
Current - Continuous Drain (Id) @ 25℃：55A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V 5V
Number of Elements：1
Power Dissipation (Max)：95W Tc
Series：STripFET™ II
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
JESD-609 Code：e3
Part Status：ACTIVE (Last Updated: 7 months ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：18MOhm
Terminal Finish：Matte Tin (Sn)
Voltage - Rated DC：60V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Current Rating：55A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STB55N
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：95W
Case Connection：DRAIN
Turn On Delay Time：20 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：18m Ω @ 27.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：37nC @ 4.5V
Rise Time：100ns
Vgs (Max)：±16V
Fall Time (Typ)：20 ns
Continuous Drain Current (ID)：55A
Threshold Voltage：1.7V
Gate to Source Voltage (Vgs)：16V
Drain to Source Breakdown Voltage：60V
Pulsed Drain Current-Max (IDM)：220A
Width：10.4mm
Height：4.6mm
Length：10.75mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 1258

1+： $2.06642
10+： $1.94946
100+： $1.83911
500+： $1.73501
1000+： $1.63680

小計金額 $2.06642

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STB55NF06LT4