NTB90N02T4G

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 24V 90A D2PAK
Date Sheet

在庫數 67865

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：90A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：85W Tc
Turn Off Delay Time：28 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2005
JESD-609 Code：e3
Pbfree Code：yes
Part Status：OBSOLETE (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
HTS Code：8541.29.00.95
Voltage - Rated DC：24V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：90A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：85W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：5.8m Ω @ 90A, 10V
Input Capacitance (Ciss) (Max) @ Vds：2120pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：29nC @ 4.5V
Rise Time：90ns
Vgs (Max)：±20V
Fall Time (Typ)：60 ns
Continuous Drain Current (ID)：90A
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.0058Ohm
Drain to Source Breakdown Voltage：24V
Pulsed Drain Current-Max (IDM)：200A
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 67865

小計金額 $0.00000

類似スペック製品

NTB90N02T4G ON Semiconductor
見積かごへ在庫數 67865
IRF3709ZSTRRPBF Infineon Technologies
最低価格$2.315525 在庫數 800
NTB4302G ON Semiconductor
見積かごへ在庫數 10000
NTB4302T4 ON Semiconductor
見積かごへ在庫數 10000
NTB75N03RG ON Semiconductor
見積かごへ在庫數 68456

Phone

NTB90N02T4G