STD1NK60T4

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Trans MOSFET N-CH 600V 1A 3-Pin(2 Tab) DPAK T/R
Date Sheet

在庫數 3663

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：12 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Manufacturer Package Identifier：TO-252-P032P
Number of Elements：1
Current - Continuous Drain (Id) @ 25℃：1A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Power Dissipation (Max)：30W Tc
Turn Off Delay Time：19 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3.7V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：SuperMESH™
JESD-609 Code：e3
Part Status：ACTIVE (Last Updated: 8 months ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：8.5Ohm
Terminal Finish：Matte Tin (Sn) - annealed
Voltage - Rated DC：600V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：1A
Base Part Number：STD1NK
JESD-30 Code：R-PSSO-G2
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：30W
Turn On Delay Time：6.5 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：8.5 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：156pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
Rise Time：5ns
Vgs (Max)：±30V
Fall Time (Typ)：25 ns
Continuous Drain Current (ID)：1A
Threshold Voltage：3V
JEDEC-95 Code：TO-252AA
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：1A
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：4A
Avalanche Energy Rating (Eas)：25 mJ
Max Junction Temperature (Tj)：150°C
Height：2.63mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 3663

小計金額 $0.00000

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STD1NK60T4