FQD1N60CTM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Trans MOSFET N-CH 600V 1A 3-Pin(2 Tab) DPAK T/R
Date Sheet

在庫數 2500

1+： $0.42922
10+： $0.40493
100+： $0.38201
500+： $0.36038
1000+： $0.33999

小計金額 $0.42922

仕様よくある質問

Factory Lead Time：5 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：1A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 28W Tc
Turn Off Delay Time：13 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
Published：2003
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：11.5Ohm
Terminal Finish：Tin (Sn)
Additional Feature：AVALANCHE RATED
Voltage - Rated DC：600V
Terminal Form：GULL WING
Current Rating：1A
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：7 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：11.5 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：170pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：6.2nC @ 10V
Rise Time：21ns
Vgs (Max)：±30V
Fall Time (Typ)：27 ns
Continuous Drain Current (ID)：1A
Threshold Voltage：2V
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：1A
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：4A
Height：2.3mm
Length：6.6mm
Width：6.1mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 2500

1+： $0.42922
10+： $0.40493
100+： $0.38201
500+： $0.36038
1000+： $0.33999

小計金額 $0.42922

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