FDS4685

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
P-Channel 40 V 27 mO 1.2 W PowerTrench Mosfet SOIC-8
Date Sheet

在庫數 20598

1+： $0.89674
10+： $0.84598
100+： $0.79810
500+： $0.75292
1000+： $0.71031

小計金額 $0.89674

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：18 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：8.2A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：50 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2005
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：27MOhm
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC：-40V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：-8.2A
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：14 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：27m Ω @ 8.2A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1872pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：27nC @ 5V
Rise Time：11ns
Drain to Source Voltage (Vdss)：40V
Vgs (Max)：±20V
Fall Time (Typ)：18 ns
Continuous Drain Current (ID)：8.2mA
Threshold Voltage：-1.6V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：-40V
Nominal Vgs：-1.6 V
Height：1.5mm
Length：5mm
Width：4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 20598

1+： $0.89674
10+： $0.84598
100+： $0.79810
500+： $0.75292
1000+： $0.71031

小計金額 $0.89674

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