BS870-7-F

Diodes Incorporated
Transistors - FETs, MOSFETs - Single
TO-236-3, SC-59, SOT-23-3
MOSFET, N CH, 60V, 0.25A, SOT-23
Date Sheet

在庫數 99000

1+： $0.25418
10+： $0.23980
100+： $0.22622
500+： $0.21342
1000+： $0.20134

小計金額 $0.25418

仕様よくある質問

Factory Lead Time：16 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Number of Pins：3
Weight：7.994566mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：250mA Ta
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：300mW Ta
Turn Off Delay Time：5 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2008
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：5Ohm
Voltage - Rated DC：60V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：250mA
Time@Peak Reflow Temperature-Max (s)：40
Pin Count：3
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：300mW
Turn On Delay Time：2 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 10V
Vgs (Max)：±20V
Continuous Drain Current (ID)：250mA
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：0.25A
Drain to Source Breakdown Voltage：80V
Dual Supply Voltage：60V
Nominal Vgs：2 V
Feedback Cap-Max (Crss)：5 pF
Height：1mm
Length：2.9mm
Width：1.3mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 99000

1+： $0.25418
10+： $0.23980
100+： $0.22622
500+： $0.21342
1000+： $0.20134

小計金額 $0.25418

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Phone

BS870-7-F