FQD11P06TM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
In a Pack of 5, P-Channel MOSFET, 9.4 A, 60 V, 3-Pin DPAK ON Semiconductor FQD11P06TM
Date Sheet

在庫數 10000

1+： $1.34636
10+： $1.27015
100+： $1.19825
500+： $1.13043
1000+： $1.06644

小計金額 $1.34636

仕様よくある質問

Factory Lead Time：4 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：9.4A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 38W Tc
Turn Off Delay Time：15 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
Published：2004
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：185mOhm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：-60V
Terminal Form：GULL WING
Current Rating：-9.4A
JESD-30 Code：R-PSSO-G2
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：6.5 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：185m Ω @ 4.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds：550pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
Rise Time：40ns
Drain to Source Voltage (Vdss)：60V
Vgs (Max)：±30V
Fall Time (Typ)：45 ns
Continuous Drain Current (ID)：-9.4A
Threshold Voltage：-4V
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：-60V
Max Junction Temperature (Tj)：150°C
Height：2.517mm
Length：6.6mm
Width：6.1mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 10000

1+： $1.34636
10+： $1.27015
100+： $1.19825
500+： $1.13043
1000+： $1.06644

小計金額 $1.34636

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FQD11P06TM