FQD17P06TM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
QF -60V 135MOHM DPAK
Date Sheet

在庫數 20000

1+： $1.26864
10+： $1.19683
100+： $1.12908
500+： $1.06517
1000+： $1.00488

小計金額 $1.26864

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：4 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：12A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 44W Tc
Turn Off Delay Time：22 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
Published：2014
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：135mOhm
Voltage - Rated DC：-60V
Terminal Form：GULL WING
Current Rating：-12A
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：13 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：135m Ω @ 6A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：27nC @ 10V
Rise Time：100ns
Drain to Source Voltage (Vdss)：60V
Vgs (Max)：±25V
Fall Time (Typ)：60 ns
Continuous Drain Current (ID)：12mA
Threshold Voltage：-4V
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：-60V
Pulsed Drain Current-Max (IDM)：48A
Height：2.39mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 20000

1+： $1.26864
10+： $1.19683
100+： $1.12908
500+： $1.06517
1000+： $1.00488

小計金額 $1.26864

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FQD17P06TM