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FDD8778
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ON Semiconductor
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Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Trans MOSFET N-CH 25V 35A 3-Pin(2 Tab) DPAK T/R
Date Sheet
在庫數 10000
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time:10 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Weight:260.37mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:35A Tc
- Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
- Number of Elements:1
- Power Dissipation (Max):39W Tc
- Turn Off Delay Time:43 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2006
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Resistance:14MOhm
- Voltage - Rated DC:25V
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Current Rating:35A
- Time@Peak Reflow Temperature-Max (s):30
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:39W
- Case Connection:DRAIN
- Turn On Delay Time:6 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:14m Ω @ 35A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:845pF @ 13V
- Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
- Rise Time:22ns
- Vgs (Max):±20V
- Fall Time (Typ):32 ns
- Continuous Drain Current (ID):35A
- Threshold Voltage:1.5V
- JEDEC-95 Code:TO-252AA
- Gate to Source Voltage (Vgs):20V
- Drain to Source Breakdown Voltage:25V
- Avalanche Energy Rating (Eas):24 mJ
- Nominal Vgs:1.5 V
- Height:2.39mm
- Length:6.73mm
- Width:6.22mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free











