FDS86242

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
Trans MOSFET N-CH 150V 4.1A 8-Pin SOIC N T/R
Date Sheet

在庫數 32500

1+： $1.09662
10+： $1.03455
100+： $0.97599
500+： $0.92074
1000+： $0.86863

小計金額 $1.09662

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Factory Lead Time：9 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：4.1A Ta
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 5W Tc
Turn Off Delay Time：13 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2008
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Position：DUAL
Terminal Form：GULL WING
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：7.9 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：67m Ω @ 4.1A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：760pF @ 75V
Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
Rise Time：10ns
Vgs (Max)：±20V
Fall Time (Typ)：10 ns
Continuous Drain Current (ID)：4.1A
Threshold Voltage：2V
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.067Ohm
Drain to Source Breakdown Voltage：150V
Max Junction Temperature (Tj)：150°C
Nominal Vgs：3.5 V
Feedback Cap-Max (Crss)：5 pF
Height：1.75mm
Length：4mm
Width：5mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 32500

1+： $1.09662
10+： $1.03455
100+： $0.97599
500+： $0.92074
1000+： $0.86863

小計金額 $1.09662

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FDS86242