FDS86252

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
FDS86252 Series 150 V 4.5 A 55 mOhm N-Channel PowerTrench MOSFET - SOIC-8
Date Sheet

在庫數 15000

1+： $1.63545
10+： $1.54288
100+： $1.45554
500+： $1.37315
1000+： $1.29543

小計金額 $1.63545

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Factory Lead Time：9 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：4.5A Ta
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 5W Tc
Turn Off Delay Time：14 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2008
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Position：DUAL
Terminal Form：GULL WING
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：5W
Turn On Delay Time：9.2 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：55m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：955pF @ 75V
Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
Rise Time：1.6ns
Vgs (Max)：±20V
Fall Time (Typ)：2.9 ns
Continuous Drain Current (ID)：4.5A
Threshold Voltage：3.4V
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.055Ohm
Drain to Source Breakdown Voltage：150V
Nominal Vgs：3.4 V
Feedback Cap-Max (Crss)：5 pF
Height：1.5mm
Length：4mm
Width：5mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant

在庫數 15000

1+： $1.63545
10+： $1.54288
100+： $1.45554
500+： $1.37315
1000+： $1.29543

小計金額 $1.63545

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FDS86252