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STD2HNK60Z
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Trans MOSFET N-CH 600V 2A 3-Pin(2 Tab) DPAK T/R
Date Sheet
在庫數 125
- 1+: $1.67470
- 10+: $1.57991
- 100+: $1.49048
- 500+: $1.40611
- 1000+: $1.32652
小計金額 $1.67470
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 7 months ago)
- Factory Lead Time:12 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:2A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):45W Tc
- Turn Off Delay Time:13 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:SuperMESH™
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Resistance:4.8Ohm
- Terminal Finish:Matte Tin (Sn) - annealed
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:STD2HNK
- Pin Count:3
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:45W
- Turn On Delay Time:10 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:4.8 Ω @ 1A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds:280pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
- Rise Time:30ns
- Vgs (Max):±30V
- Fall Time (Typ):50 ns
- Continuous Drain Current (ID):2A
- JEDEC-95 Code:TO-252AA
- Gate to Source Voltage (Vgs):30V
- Drain Current-Max (Abs) (ID):2A
- Drain to Source Breakdown Voltage:600V
- Pulsed Drain Current-Max (IDM):8A
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 125
- 1+: $1.67470
- 10+: $1.57991
- 100+: $1.49048
- 500+: $1.40611
- 1000+: $1.32652
小計金額 $1.67470
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