FQD4P40TM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Trans MOSFET P-CH 400V 2.7A 3-Pin(2 Tab) DPAK T/R
Date Sheet

在庫數 10000

1+： $3.13790
10+： $2.96029
100+： $2.79272
500+： $2.63465
1000+： $2.48551

小計金額 $3.13790

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：8 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：2.7A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 50W Tc
Turn Off Delay Time：35 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Voltage - Rated DC：-400V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：-2.7A
Time@Peak Reflow Temperature-Max (s)：30
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：13 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：3.1 Ω @ 1.35A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：680pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
Rise Time：55ns
Drain to Source Voltage (Vdss)：400V
Vgs (Max)：±30V
Fall Time (Typ)：37 ns
Continuous Drain Current (ID)：2.7A
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：-400V
Avalanche Energy Rating (Eas)：260 mJ
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 10000

1+： $3.13790
10+： $2.96029
100+： $2.79272
500+： $2.63465
1000+： $2.48551

小計金額 $3.13790

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