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FDM3622
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- 8-PowerWDFN
- Trans MOSFET N-CH 100V 4.4A 8-Pin MicroFET T/R
Date Sheet
在庫數 39599
- 1+: $1.99816
- 10+: $1.88506
- 100+: $1.77836
- 500+: $1.67770
- 1000+: $1.58273
小計金額 $1.99816
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 3 days ago)
- Factory Lead Time:10 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-PowerWDFN
- Number of Pins:8
- Weight:210mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:4.4A Ta
- Drive Voltage (Max Rds On, Min Rds On):6V 10V
- Number of Elements:1
- Power Dissipation (Max):2.1W Ta
- Turn Off Delay Time:35 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- JESD-609 Code:e4
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:5
- ECCN Code:EAR99
- Terminal Finish:Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Voltage - Rated DC:100V
- Terminal Position:DUAL
- Terminal Form:FLAT
- Current Rating:4.4A
- JESD-30 Code:S-PDSO-F5
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:2.1W
- Case Connection:DRAIN
- Turn On Delay Time:11 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:60m Ω @ 4.4A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:1090pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
- Rise Time:25ns
- Vgs (Max):±20V
- Fall Time (Typ):26 ns
- Continuous Drain Current (ID):4.4A
- Threshold Voltage:4V
- Gate to Source Voltage (Vgs):20V
- Drain-source On Resistance-Max:0.06Ohm
- Drain to Source Breakdown Voltage:100V
- Height:950μm
- Length:3mm
- Width:2mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 39599
- 1+: $1.99816
- 10+: $1.88506
- 100+: $1.77836
- 500+: $1.67770
- 1000+: $1.58273
小計金額 $1.99816
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