FDMS7650

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-PowerTDFN
MOSFET N-CH 30V POWER56
Date Sheet

在庫數 79999

1+： $3.18811
10+： $3.00766
100+： $2.83741
500+： $2.67680
1000+： $2.52529

小計金額 $3.18811

仕様よくある質問

Factory Lead Time：10 Weeks
Lifecycle Status：ACTIVE (Last Updated: 1 week ago)
Package / Case：8-PowerTDFN
Mounting Type：Surface Mount
Mount：Surface Mount
Number of Pins：8
Weight：90mg
Transistor Element Material：SILICON
Power Dissipation (Max)：2.5W Ta 104W Tc
Number of Elements：1
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Current - Continuous Drain (Id) @ 25℃：36A Ta 100A Tc
Turn Off Delay Time：83 ns
Series：PowerTrench®
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~150°C TJ
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Resistance：1MOhm
Terminal Finish：Tin (Sn)
Terminal Position：DUAL
Terminal Form：FLAT
JESD-30 Code：R-PDSO-F5
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：28 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：0.99m Ω @ 36A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：14965pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：209nC @ 10V
Rise Time：24ns
Vgs (Max)：±20V
Fall Time (Typ)：21 ns
Continuous Drain Current (ID)：60A
Threshold Voltage：1.9V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：36A
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：450A
Avalanche Energy Rating (Eas)：544 mJ
Nominal Vgs：1.9 V
Length：5mm
Height：1.05mm
Width：6mm
RoHS Status：ROHS3 Compliant
Radiation Hardening：No
REACH SVHC：No SVHC
Lead Free：Lead Free

在庫數 79999

1+： $3.18811
10+： $3.00766
100+： $2.83741
500+： $2.67680
1000+： $2.52529

小計金額 $3.18811

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FDMS7650