FDMC8026S

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-PowerWDFN
MOSFET 30V N-Channel PowerTrench SyncFET
Date Sheet

在庫數 3000

1+： $1.33167
10+： $1.25630
100+： $1.18519
500+： $1.11810
1000+： $1.05481

小計金額 $1.33167

仕様よくある質問

Factory Lead Time：23 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Number of Pins：8
Weight：165.33333mg
Transistor Element Material：SILICON
Turn Off Delay Time：30 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3V @ 1mA
Number of Elements：1
Power Dissipation (Max)：2.4W Ta 36W Tc
Current - Continuous Drain (Id) @ 25℃：19A Ta 21A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®, SyncFET™
JESD-609 Code：e4
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 1 week ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Terminal Finish：Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Terminal Position：DUAL
JESD-30 Code：S-PDSO-N5
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：36W
Case Connection：DRAIN
Turn On Delay Time：11 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4.4m Ω @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds：3165pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：52nC @ 10V
Rise Time：5ns
Vgs (Max)：±20V
Fall Time (Typ)：4 ns
Continuous Drain Current (ID)：19A
Threshold Voltage：1.6V
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.0044Ohm
Drain to Source Breakdown Voltage：30V
Avalanche Energy Rating (Eas)：66 mJ
Length：3.3mm
Width：3.3mm
Height：750μm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant

在庫數 3000

1+： $1.33167
10+： $1.25630
100+： $1.18519
500+： $1.11810
1000+： $1.05481

小計金額 $1.33167

類似スペック製品

FDMC8026S ON Semiconductor
最低価格$1.331674 在庫數 3000
FDS6699S ON Semiconductor
見積かごへ在庫數 4000
FDMS7678 ON Semiconductor
最低価格$1.082801 在庫數 3000
FDMS7670 ON Semiconductor
見積かごへ在庫數 480

Phone

FDMC8026S