FCU900N60Z

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-251-3 Stub Leads, IPak
FAIRCHILD SEMICONDUCTOR FCU900N60ZPower MOSFET, N Channel, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V
Date Sheet

在庫數 1722

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：15 Weeks
Lifecycle Status：ACTIVE (Last Updated: 3 days ago)
Contact Plating：Tin
Package / Case：TO-251-3 Stub Leads, IPak
Mounting Type：Through Hole
Mount：Through Hole
Number of Pins：3
Weight：539mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：4.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Turn Off Delay Time：33.6 ns
Power Dissipation (Max)：52W Tc
Number of Elements：1
Published：2012
Series：SuperFET® II
Packaging：Tube
Operating Temperature：-55°C~150°C TJ
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：52W
Turn On Delay Time：10.9 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：900m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：710pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
Rise Time：5.3ns
Drain to Source Voltage (Vdss)：600V
Vgs (Max)：±20V
Fall Time (Typ)：11.9 ns
Continuous Drain Current (ID)：4.5A
Threshold Voltage：2.5V
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.9Ohm
Drain to Source Breakdown Voltage：675V
Avalanche Energy Rating (Eas)：47.5 mJ
Width：2.5mm
Length：6.8mm
Height：7.57mm
RoHS Status：ROHS3 Compliant
REACH SVHC：No SVHC
Lead Free：Lead Free

在庫數 1722

小計金額 $0.00000

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FCU900N60Z