FDU3N40TU

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-251-3 Short Leads, IPak, TO-251AA
MOSFET N-CH 400V 2A IPAK
Date Sheet

在庫數 115920

1+： $1.99029
10+： $1.87763
100+： $1.77135
500+： $1.67109
1000+： $1.57650

小計金額 $1.99029

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 14 hours ago)
Factory Lead Time：4 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins：3
Weight：343.08mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：2A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：30W Tc
Turn Off Delay Time：10 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：UniFET™
Published：2013
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：3.4Ohm
Terminal Finish：Tin (Sn)
Additional Feature：FAST SWITCHING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：30W
Case Connection：DRAIN
Turn On Delay Time：10 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：3.4 Ω @ 1A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：225pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：6nC @ 10V
Rise Time：30ns
Vgs (Max)：±30V
Fall Time (Typ)：25 ns
Continuous Drain Current (ID)：2A
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：2A
Drain to Source Breakdown Voltage：400V
Pulsed Drain Current-Max (IDM)：8A
Avalanche Energy Rating (Eas)：46 mJ
Height：7.57mm
Length：6.8mm
Width：2.5mm
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 115920

1+： $1.99029
10+： $1.87763
100+： $1.77135
500+： $1.67109
1000+： $1.57650

小計金額 $1.99029

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