FDU3N40TU

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-251-3 Short Leads, IPak, TO-251AA
MOSFET N-CH 400V 2A IPAK
Date Sheet

在庫數 115920

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：4 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins：3
Weight：343.08mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：2A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：30W Tc
Turn Off Delay Time：10 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：UniFET™
Published：2013
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 14 hours ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：3.4Ohm
Terminal Finish：Tin (Sn)
Additional Feature：FAST SWITCHING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：30W
Case Connection：DRAIN
Turn On Delay Time：10 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：3.4 Ω @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds：225pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：6nC @ 10V
Rise Time：30ns
Vgs (Max)：±30V
Fall Time (Typ)：25 ns
Continuous Drain Current (ID)：2A
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：2A
Drain to Source Breakdown Voltage：400V
Pulsed Drain Current-Max (IDM)：8A
Avalanche Energy Rating (Eas)：46 mJ
Height：7.57mm
Length：6.8mm
Width：2.5mm
REACH SVHC：not_compliant
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 115920

小計金額 $0.00000

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