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STD4NK80Z-1
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-251-3 Short Leads, IPak, TO-251AA
- MOSFET N-CH 800V 3A IPAK
Date Sheet
在庫數 10000
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time：12 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins：3
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：3A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：80W Tc
- Turn Off Delay Time：35 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：SuperMESH™
- JESD-609 Code：e3
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Additional Feature：AVALANCHE RATED
- Peak Reflow Temperature (Cel)：260
- Time@Peak Reflow Temperature-Max (s)：30
- Base Part Number：STD4N
- Pin Count：3
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：80W
- Turn On Delay Time：13 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：3.5 Ω @ 1.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds：575pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：22.5nC @ 10V
- Rise Time：12ns
- Vgs (Max)：±30V
- Fall Time (Typ)：32 ns
- Continuous Drain Current (ID)：3A
- Gate to Source Voltage (Vgs)：30V
- Drain Current-Max (Abs) (ID)：3A
- Drain to Source Breakdown Voltage：800V
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
在庫數 10000
小計金額 $0.00000
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