STD3NK80Z-1

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-251-3 Short Leads, IPak, TO-251AA
STMICROELECTRONICS STD3NK80Z-1 Power MOSFET, N Channel, 1.25 A, 800 V, 3.8 ohm, 10 V, 3.75 V
Date Sheet

在庫數 300

1+： $2.14925
10+： $2.02759
100+： $1.91282
500+： $1.80455
1000+： $1.70240

小計金額 $2.14925

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
Factory Lead Time：12 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins：3
Weight：4.535924g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：2.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：70W Tc
Turn Off Delay Time：36 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：SuperMESH™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn)
Additional Feature：AVALANCHE RATED
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD3N
Pin Count：3
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：70W
Turn On Delay Time：17 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4.5 Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id：4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds：485pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：19nC @ 10V
Rise Time：27ns
Vgs (Max)：±30V
Fall Time (Typ)：40 ns
Continuous Drain Current (ID)：1.25A
Threshold Voltage：3.75V
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：2.5A
Drain to Source Breakdown Voltage：800V
Height：6.2mm
Length：6.6mm
Width：2.4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 300

1+： $2.14925
10+： $2.02759
100+： $1.91282
500+： $1.80455
1000+： $1.70240

小計金額 $2.14925

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STD3NK80Z-1