FDS4470

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
MOSFET SO-8
Date Sheet

在庫數 79999

1+： $1.70000
10+： $1.60378
100+： $1.51300
500+： $1.42736
1000+： $1.34656

小計金額 $1.70000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：9 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：12.5A Ta
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：37 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：9MOhm
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC：40V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：12.5A
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：14 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：9m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：2659pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：63nC @ 10V
Rise Time：12ns
Vgs (Max)：+30V, -20V
Fall Time (Typ)：29 ns
Continuous Drain Current (ID)：12.5A
Threshold Voltage：3.9V
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：40V
Pulsed Drain Current-Max (IDM)：50A
Avalanche Energy Rating (Eas)：370 mJ
Height：1.5mm
Length：5mm
Width：4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 79999

1+： $1.70000
10+： $1.60378
100+： $1.51300
500+： $1.42736
1000+： $1.34656

小計金額 $1.70000

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FDS4470