FDS8882

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
MOSFET N-CH 30V 9A 8-SOIC
Date Sheet

在庫數 4000

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 6 days ago)
Factory Lead Time：18 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：9A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：19 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：20MOhm
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature：ULTRA LOW RESISTANCE
Terminal Position：DUAL
Terminal Form：GULL WING
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：7 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：20m Ω @ 9A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：940pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Rise Time：3ns
Vgs (Max)：±20V
Fall Time (Typ)：4 ns
Continuous Drain Current (ID)：9A
Threshold Voltage：1.7V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：9A
Drain to Source Breakdown Voltage：30V
Avalanche Energy Rating (Eas)：32 mJ
Nominal Vgs：1.7 V
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 4000

小計金額 $0.00000

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FDS8882