FDD6680AS

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET 30V NCH DPAK POWR TRENCH
Date Sheet

在庫數 5320

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：10 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：55A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：60W Ta
Turn Off Delay Time：28 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3V @ 1mA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®, SyncFET™
Published：2004
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 16 hours ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Voltage - Rated DC：30V
Terminal Form：GULL WING
Current Rating：55A
Base Part Number：FDD6680
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：60mW
Case Connection：DRAIN
Turn On Delay Time：10 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：10.5m Ω @ 12.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：29nC @ 10V
Rise Time：6ns
Vgs (Max)：±20V
Fall Time (Typ)：12 ns
Continuous Drain Current (ID)：55A
Threshold Voltage：1.4V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：30V
Dual Supply Voltage：30V
Avalanche Energy Rating (Eas)：205 mJ
Nominal Vgs：1.4 V
Height：2.39mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 5320

小計金額 $0.00000

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FDD6680AS