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FDD9409-F085
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-channel Power Trench MOSFET
Date Sheet
在庫數 7500
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time:45 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Weight:260.37mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:90A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):150W Tc
- Turn Off Delay Time:41 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Series:Automotive, AEC-Q101, PowerTrench®
- Published:2017
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:not_compliant
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- JESD-30 Code:R-PSSO-G2
- Number of Channels:1
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Case Connection:DRAIN
- Turn On Delay Time:23 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:3.2m Ω @ 80A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:3130pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:46nC @ 10V
- Rise Time:22ns
- Drain to Source Voltage (Vdss):40V
- Vgs (Max):±20V
- Fall Time (Typ):15 ns
- Continuous Drain Current (ID):90A
- Gate to Source Voltage (Vgs):20V
- DS Breakdown Voltage-Min:40V
- RoHS Status:ROHS3 Compliant
在庫數 7500
小計金額 $0.00000
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