FDMC2610

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-PowerWDFN
MOSFET N-CH 200V 2.2A POWER33-8
Date Sheet

在庫數 120

1+： $6.97388
10+： $6.57913
100+： $6.20673
500+： $5.85540
1000+： $5.52397

小計金額 $6.97388

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 4 days ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Number of Pins：8
Weight：165.33333mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：2.2A Ta 9.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：2.1W Ta 42W Tc
Turn Off Delay Time：29 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：UniFET™
Published：2017
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：200MOhm
Terminal Finish：Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Voltage - Rated DC：220V
Terminal Position：DUAL
Terminal Form：FLAT
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：9.5A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.1W
Turn On Delay Time：17 ns
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：200m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：960pF @ 100V
Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
Rise Time：13ns
Vgs (Max)：±20V
Fall Time (Typ)：16 ns
Continuous Drain Current (ID)：9.5A
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：2.2A
Drain to Source Breakdown Voltage：200V
Height：950μm
Length：3mm
Width：3mm
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 120

1+： $6.97388
10+： $6.57913
100+： $6.20673
500+： $5.85540
1000+： $5.52397

小計金額 $6.97388

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FDMC2610