BBS3002-TL-1E

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET P-CH 60V 100A
Date Sheet

在庫數 32489

1+： $3.20022
10+： $3.01907
100+： $2.84818
500+： $2.68696
1000+： $2.53487

小計金額 $3.20022

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 5 days ago)
Factory Lead Time：10 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：2
Weight：2.084002g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：100A Ta
Drive Voltage (Max Rds On, Min Rds On)：4V 10V
Number of Elements：1
Power Dissipation (Max)：90W Tc
Turn Off Delay Time：800 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：1999
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Position：SINGLE
Terminal Form：GULL WING
Reach Compliance Code：not_compliant
Pin Count：2
Configuration：SINGLE WITH BUILT-IN DIODE
Number of Channels：1
Operating Mode：ENHANCEMENT MODE
Power Dissipation：90W
Case Connection：DRAIN
Turn On Delay Time：95 ns
FET Type：P-Channel
Rds On (Max) @ Id, Vgs：5.8m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds：13200pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：280nC @ 10V
Rise Time：1μs
Drain to Source Voltage (Vdss)：60V
Vgs (Max)：±20V
Fall Time (Typ)：820 ns
Continuous Drain Current (ID)：-100A
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.009Ohm
Drain to Source Breakdown Voltage：-60V
Pulsed Drain Current-Max (IDM)：400A
Avalanche Energy Rating (Eas)：340 mJ
Max Junction Temperature (Tj)：150°C
Height：5.08mm
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 32489

1+： $3.20022
10+： $3.01907
100+： $2.84818
500+： $2.68696
1000+： $2.53487

小計金額 $3.20022

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BBS3002-TL-1E