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FDT86246
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-261-4, TO-261AA
- MOSFET 150V N-Channel PowerTrench MOSFET
Date Sheet
在庫數 95600
- 1+: $1.60119
- 10+: $1.51056
- 100+: $1.42505
- 500+: $1.34439
- 1000+: $1.26829
小計金額 $1.60119
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 12 hours ago)
- Factory Lead Time:8 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-261-4, TO-261AA
- Number of Pins:4
- Weight:250.2mg
- Transistor Element Material:SILICON
- Number of Elements:1
- Power Dissipation (Max):2.2W Ta
- Turn Off Delay Time:4.6 ns
- Drive Voltage (Max Rds On, Min Rds On):6V 10V
- Current - Continuous Drain (Id) @ 25℃:2A Ta
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2006
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:4
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Additional Feature:ULTRA-LOW RESISTANCE
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:2.2W
- Case Connection:DRAIN
- Turn On Delay Time:7.8 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:236m Ω @ 2A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:215pF @ 75V
- Gate Charge (Qg) (Max) @ Vgs:4nC @ 10V
- Rise Time:2.3ns
- Vgs (Max):±20V
- Fall Time (Typ):1.2 ns
- Continuous Drain Current (ID):2A
- Threshold Voltage:3.1V
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):2A
- Drain-source On Resistance-Max:0.236Ohm
- Drain to Source Breakdown Voltage:150V
- Nominal Vgs:3.1 V
- Feedback Cap-Max (Crss):5 pF
- Length:3.7mm
- Height:1.7mm
- Width:6.7mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
在庫數 95600
- 1+: $1.60119
- 10+: $1.51056
- 100+: $1.42505
- 500+: $1.34439
- 1000+: $1.26829
小計金額 $1.60119
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