FDD86102LZ

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET 100V N-Channel PowerTrench MOSFET
Date Sheet

在庫數 2000

1+： $2.29431
10+： $2.16444
100+： $2.04193
500+： $1.92635
1000+： $1.81731

小計金額 $2.29431

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：8 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：8A Ta 35A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：3.1W Ta 54W Tc
Turn Off Delay Time：20 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2006
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Form：GULL WING
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：54W
Case Connection：DRAIN
Turn On Delay Time：6.6 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：22.5m Ω @ 8A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1540pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
Rise Time：2.3ns
Vgs (Max)：±20V
Fall Time (Typ)：2.3 ns
Continuous Drain Current (ID)：8A
Threshold Voltage：1.5V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：8A
Drain-source On Resistance-Max：0.0225Ohm
Drain to Source Breakdown Voltage：100V
Pulsed Drain Current-Max (IDM)：40A
Avalanche Energy Rating (Eas)：84 mJ
Nominal Vgs：1.5 V
Height：2.39mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant

在庫數 2000

1+： $2.29431
10+： $2.16444
100+： $2.04193
500+： $1.92635
1000+： $1.81731

小計金額 $2.29431

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FDD86102LZ