FDD3860

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
In a Pack of 5, FDD3860 N-Channel MOSFET, 29 A, 100 V PowerTrench, 3-Pin DPAK ON Semiconductor
Date Sheet

在庫數 100

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：8 Weeks
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type：Surface Mount
Mount：Surface Mount
Contact Plating：Tin
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4.5V @ 250μA
Turn Off Delay Time：24 ns
Power Dissipation (Max)：3.1W Ta 69W Tc
Number of Elements：1
Drive Voltage (Max Rds On, Min Rds On)：10V
Current - Continuous Drain (Id) @ 25℃：6.2A Ta
Published：2006
Series：PowerTrench®
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~150°C TJ
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：36MOhm
Terminal Form：GULL WING
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：3.1W
Case Connection：DRAIN
Turn On Delay Time：16 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：36m Ω @ 5.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1740pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：31nC @ 10V
Rise Time：10ns
Vgs (Max)：±20V
Fall Time (Typ)：7 ns
Continuous Drain Current (ID)：6.2A
Threshold Voltage：3.8V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：42A
Drain to Source Breakdown Voltage：100V
Pulsed Drain Current-Max (IDM)：60A
Width：6.22mm
Length：6.73mm
Height：2.39mm
RoHS Status：ROHS3 Compliant
Radiation Hardening：No
REACH SVHC：No SVHC
Lead Free：Lead Free

在庫數 100

小計金額 $0.00000

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FDD3860