FDD6N50FTM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 500V 5.5A DPAK
Date Sheet

在庫數 12841

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 20 hours ago)
Factory Lead Time：4 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：5.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：89W Tc
Turn Off Delay Time：33.4 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：UniFET™
Published：2013
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：1.15Ohm
Terminal Finish：Tin (Sn)
Terminal Form：GULL WING
Base Part Number：FDD6N50
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：89W
Case Connection：DRAIN
Turn On Delay Time：17 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1.15 Ω @ 2.75A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：960pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：19.8nC @ 10V
Rise Time：28.3ns
Vgs (Max)：±30V
Fall Time (Typ)：20.5 ns
Continuous Drain Current (ID)：5.5A
JEDEC-95 Code：TO-252AA
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：500V
Pulsed Drain Current-Max (IDM)：22A
Avalanche Energy Rating (Eas)：270 mJ
Feedback Cap-Max (Crss)：9.5 pF
Height：2.39mm
Length：6.73mm
Width：6.22mm
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 12841

小計金額 $0.00000

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