FDD6N50TM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET 30V/16V 9.5/12MO NCH SINGLE
Date Sheet

在庫數 20000

1+： $1.75202
10+： $1.65285
100+： $1.55930
500+： $1.47103
1000+： $1.38777

小計金額 $1.75202

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 20 hours ago)
Factory Lead Time：4 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：6A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：89W Tc
Turn Off Delay Time：25 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：UniFET™
Published：2016
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：900mOhm
Terminal Finish：Tin (Sn)
Terminal Form：GULL WING
Base Part Number：FDD6N50
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：89W
Case Connection：DRAIN
Turn On Delay Time：6 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：900m Ω @ 3A, 10V
Vgs(th) (Max) @ Id：5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：9400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：16.6nC @ 10V
Rise Time：55ns
Vgs (Max)：±30V
Fall Time (Typ)：35 ns
Continuous Drain Current (ID)：6A
Gate to Source Voltage (Vgs)：30V
Drain Current-Max (Abs) (ID)：6A
Drain to Source Breakdown Voltage：500V
Pulsed Drain Current-Max (IDM)：24A
Avalanche Energy Rating (Eas)：270 mJ
Height：2.39mm
Length：6.73mm
Width：6.22mm
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 20000

1+： $1.75202
10+： $1.65285
100+： $1.55930
500+： $1.47103
1000+： $1.38777

小計金額 $1.75202

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