FDS86140

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
MOSFET 100V N-Channel PowerTrench MOSFET
Date Sheet

在庫數 15000

1+： $3.15868
10+： $2.97989
100+： $2.81121
500+： $2.65209
1000+： $2.50197

小計金額 $3.15868

仕様よくある質問

Factory Lead Time：9 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Number of Elements：1
Current - Continuous Drain (Id) @ 25℃：11.2A Ta
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Power Dissipation (Max)：2.5W Ta 5W Tc
Turn Off Delay Time：23 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2011
JESD-609 Code：e4
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 2 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature：ULTRA-LOW RESISTANCE
Terminal Position：DUAL
Terminal Form：GULL WING
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：5W
Turn On Delay Time：13.7 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：9.8m Ω @ 11.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds：2580pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：41nC @ 10V
Rise Time：5.6ns
Vgs (Max)：±20V
Fall Time (Typ)：4.8 ns
Continuous Drain Current (ID)：11.2A
Threshold Voltage：2.7V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：100V
Nominal Vgs：2.7 V
Feedback Cap-Max (Crss)：30 pF
Height：1.5mm
Length：4mm
Width：5mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 15000

1+： $3.15868
10+： $2.97989
100+： $2.81121
500+： $2.65209
1000+： $2.50197

小計金額 $3.15868

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FDS86140